Kinetic model of II-VI(001) semiconductor surfaces: Growth rates in atomic layer epitaxy

Physics – Condensed Matter – Materials Science

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

9 pages (REVTeX), 8 figures (EPS). Content revised, references added, typos corrected

Scientific paper

10.1103/PhysRevB.69.165303

We present a zinc-blende lattice gas model of II-VI(001) surfaces, which is investigated by means of Kinetic Monte Carlo (KMC) simulations. Anisotropic effective interactions between surface metal atoms allow for the description of, e.g., the sublimation of CdTe(001), including the reconstruction of Cd-terminated surfaces and its dependence on the substrate temperature T. Our model also includes Te-dimerization and the potential presence of excess Te in a reservoir of weakly bound atoms at the surface. We study the self-regulation of atomic layer epitaxy (ALE) and demonstrate how the interplay of the reservoir occupation with the surface kinetics results in two different regimes: at high T the growth rate is limited to 0.5 layers per ALE cycle, whereas at low enough T each cycle adds a complete layer of CdTe. The transition between the two regimes occurs at a characteristic temperature and its dependence on external parameters is studied. Comparing the temperature dependence of the ALE growth rate in our model with experimental results for CdTe we find qualitative agreement.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Kinetic model of II-VI(001) semiconductor surfaces: Growth rates in atomic layer epitaxy does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Kinetic model of II-VI(001) semiconductor surfaces: Growth rates in atomic layer epitaxy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Kinetic model of II-VI(001) semiconductor surfaces: Growth rates in atomic layer epitaxy will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-320365

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.