Jumps in current-voltage characteristics in disordered films

Details Jumps in current-voltage characteristics in disordered films Jumps in current-voltage characteristics in disordered films

2008-10-23

arxiv.org/abs/0810.4312v2

Phys. Rev. Lett. 102, 176803 (2009)

Physics

Condensed Matter

Disordered Systems and Neural Networks

Final version, as published; 4 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.102.176803

We argue that giant jumps of current at finite voltages observed in disordered samples of InO, TiN and YSi manifest a bistability caused by the overheating of electrons. One of the stable states is overheated and thus low-resistive, while the other, high-resistive state is heated much less by the same voltage. The bistability occurs provided that cooling of electrons is inefficient and the temperature dependence of the equilibrium resistance, R(T), is steep enough. We use experimental R(T) and assume phonon mechanism of the cooling taking into account its strong suppression by disorder. Our description of details of the I-V characteristics does not involve adjustable parameters and turns out to be in a quantitative agreement with the experiments. We propose experiments for more direct checks of this physical picture.

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