Joule-assisted silicidation for short-channel silicon nanowire devices

Details Joule-assisted silicidation for short-channel silicon nanowire devices Joule-assisted silicidation for short-channel silicon nanowire devices

2011-10-25

arxiv.org/abs/1110.5668v1

ACS Nano, 5, (9), 7117-7123 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 4 figures

Scientific paper

10.1021/nn202524j

We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm.

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