Is keV ion induced pattern formation on Si(001) caused by metal impurities?

Details Is keV ion induced pattern formation on Si(001) caused by metal impurities? Is keV ion induced pattern formation on Si(001) caused by metal impurities?

2009-12-04

arxiv.org/abs/0912.0890v2

Sven Macko et al 2010 Nanotechnology 21 085301 (9pp)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

15 pages, 7 figures. This is an author-created, un-copyedited version of an article published in Nanotechnology. IOP Publishin

Scientific paper

10.1088/0957-4484/21/8/085301

We present ion beam erosion experiments performed in ultra high vacuum using a differentially pumped ion source and taking care that the ion beam hits the Si(001) sample only. Under these conditions no ion beam patterns form on Si for angles below 45 degrees with respect to the global surface normal using 2 keV Kr ions and fluences of 2 x 10^22 ions/m^2. In fact, the ion beam induces a smoothening of preformed patterns. Simultaneous sputter deposition of stainless steel in this angular range creates a variety of patterns, similar to those previously ascribed to clean ion beam induced destabilization of the surface profile. Only for grazing incidence with incident angles between 60 degrees and 83 degrees pronounced ion beam patterns form. It appears that the angular dependent stability of Si(001) against pattern formation under clean ion beam erosion conditions is related to the angular dependence of the sputtering yield, and not primarily to a curvature dependent yield as invoked frequently in continuum theory models.

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