Physics – Condensed Matter – Materials Science
Scientific paper
2011-06-03
Physics
Condensed Matter
Materials Science
Scientific paper
Carrier-induced ferromagnetic semiconductors (FMSs) have been intensively studied for decades as they have novel functionalities that cannot be achieved with conventional metallic materials. These include the ability to control magnetism by electrical gating or light irradiation, while fully inheriting the advantages of semiconductor materials such as band engineering. Prototype FMSs such as (In,Mn)As or (Ga,Mn)As, however, are always p-type, making it difficult to be used in real spin devices. This is because manganese (Mn) atoms in those materials work as local magnetic moments and acceptors that provide holes for carrier-mediated ferromagnetism. Here we show that by introducing iron (Fe) into InAs, it is possible to fabricate a new FMS with the ability to control ferromagnetism by both Fe and independent carrier doping. Despite the general belief that the tetrahedral Fe-As bonding is antiferromagnetic, we demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS, a missing piece of semiconductor spintronics for decades. This achievement opens the way to realise novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.
Anh Le Duc
Hai Pham Nam
Tanaka Masaaki
No associations
LandOfFree
Iron-based n-type electron-induced ferromagnetic semiconductor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Iron-based n-type electron-induced ferromagnetic semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Iron-based n-type electron-induced ferromagnetic semiconductor will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-223243