Ion Beam Synthesis of embedded SiC

Details Ion Beam Synthesis of embedded SiC Ion Beam Synthesis of embedded SiC

2005-05-24

arxiv.org/abs/cond-mat/0505574v1

Physics

Condensed Matter

Materials Science

10 pages, 6 figures

Scientific paper

The synthesis of embedded silicon carbide was carried out in N type silicon samples having (100) and (111) orientations using high dose implantation of carbon ions at room temperature. The variation of dose was employed to get dose dependence of silicon carbide formation. Postimplant annealing at 1000 C in order to anneal out the implantion induced defects and to get silicon carbide precipitates in silicon matrix. Detailed Fourier tarnsform infrared spectroscopy analysis and x-ray diffraction studies confirms the formation of cubic phase of silicon carbide. The grain size of the silicon carbide precipitates is estimated to a few nano meters. The silicon carbide precipitates have been found to exhibit a better crystalline order in silicon (100) samples than in silicon (111) samples.The x-ray diffraction results also indicate the amorphization of bombarded region of the silicon samples. After annealing the amorphized region got recrystalized into a polycrystalline phase of silicon.

Affiliated with

Also associated with

No associations

Rating

Ion Beam Synthesis of embedded SiC does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Ion Beam Synthesis of embedded SiC, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion Beam Synthesis of embedded SiC will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-72460