Physics – Condensed Matter – Materials Science
Scientific paper
1997-10-28
Physics
Condensed Matter
Materials Science
13 pages, Latex, 4 ps figures. to appear in High Pressure Research 69 (1997)
Scientific paper
The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole concentration is interpreted through a carrier statistics equation with a single (nitrogen) or double (tin) acceptor whose ionization energies decrease under pressure due to the dielectric constant increase. The pressure effect on the hole mobility is also accounted for by considering the pressure dependencies of both the phonon frequencies and the hole-phonon coupling constants involved in the scattering rates.
Chevy A.
Errandonea Daniel
Roa Luis
Sánchez-Royo J. F.
Segura Antigona
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