Inverted spin polarization of Heusler alloys for new spintronic devices

Details Inverted spin polarization of Heusler alloys for new spintronic devices Inverted spin polarization of Heusler alloys for new spintronic devices

2006-03-23

arxiv.org/abs/cond-mat/0603616v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2219333

A new magnetic logic overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive and negative TMR values at different bias voltages at room temperature which generally adds an additional degree of freedom to all spintronic devices.

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