Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity

Details Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity

2011-01-21

arxiv.org/abs/1101.4218v1

Appl. Phys. Lett. 98, 132509 (2011)

Physics

Condensed Matter

Superconductivity

Submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.3573824

We report a technique for applying a dc voltage or current bias to the center conductor of a high-quality factor superconducting microwave cavity without significantly disturbing selected cavity modes. This is accomplished by incorporating dc bias lines into the cavity at specific locations. The measured S-matrix parameters of the system are in good agreement with theoretical predictions and simulations. We find that at 4 K the quality factor of the cavity degrades by less than 1% under the application of a dc bias.

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