Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs

Details Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs

2010-12-07

arxiv.org/abs/1012.1579v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 figures, 3 pages, accepted for publication in IEEE EDL

Scientific paper

In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility ({\mu}h) in the transport direction and alleviates charge flow towards the gate oxide. {\mu}h enhancement by 40% in SiGe and 100% in Si-cap SiGe is observed compared to the Si hole universal mobility. A ~40% reduction in NBTI degradation, gate leakage and flicker noise (1/f) is observed which is attributed to a 4% increase in the hole-oxide barrier height ({\phi}) in SiGe. Similar field acceleration factor ({\Gamma}) for threshold voltage shift ({\Delta}VT) and increase in noise ({\Delta}SVG) in Si and SiGe suggests identical degradation mechanisms.

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