Intrinsic Origin of Negative Fixed Charge in Wet Oxidation for Silicon Carbide

Details Intrinsic Origin of Negative Fixed Charge in Wet Oxidation for Silicon Carbide Intrinsic Origin of Negative Fixed Charge in Wet Oxidation for Silicon Carbide

2012-04-25

arxiv.org/abs/1204.5556v1

Physics

Condensed Matter

Materials Science

Scientific paper

We demonstrate on the basis of first-principles calculations that the formation of carbonate-like moiety in SiO$_2$ could be the intrinsic origin of negative fixed charge in SiC thermal oxidation. We find that two possible origins for the negative fixed charges are O-lone-pair state and a negatively charged CO$_3$ ion in SiO$_2$. Such CO$_3$ ion is able to be formed as a result of the existence of residual C atoms in SiO$_2$, which are expected to be emitted from the interface between SiC and SiO$_2$, and the incorporation of H atoms during wet oxidation.

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