Intrinsic noise of a micro-mechanical displacement detector based on the radio-frequency single-electron transistor

Details Intrinsic noise of a micro-mechanical displacement detector based on the radio-frequency single-electron transistor Intrinsic noise of a micro-mechanical displacement detector based on the radio-frequency single-electron transistor

2001-09-21

arxiv.org/abs/cond-mat/0109412v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

24 pages, 7 figures

Scientific paper

10.1063/1.1453494

We investigate the intrinsic noise of a micro-mechanical displacement detector based on the radio-frequency single-electron transistor (rf-SET). Using the noise analysis of a SET by Korotkov as our starting point, we determine the spectral density of the displacement noise due to the tunneling current shot noise. The resulting mechanical displacement noise decreases in inverse proportion to the increasing gate voltage. In contrast, the displacement noise due to the fluctuating SET island charge increases approximately linearly with increasing gate voltage. Taking into account both of these noise sources results in an optimum gate voltage value for the lowest displacement noise and hence best sensitivity. We show that a displacement sensitivity of about 10^-4 Angstroms and a force sensitivity of about 10^-16 N are predicted for a micron-sized cantilever with a realizable resonant frequency 100 MHz and quality factor Q~10^4. Such sensitivities would allow the detection of quantum squeezing in the mechanical motion of the micro-mechanical cantilever and the detection of single-spin magnetic resonance in magnetic resonance force microscopy (MRFM).

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