Intrinsic mechanism for high temperature ferromagnetism in GaMnN

Details Intrinsic mechanism for high temperature ferromagnetism in GaMnN Intrinsic mechanism for high temperature ferromagnetism in GaMnN

2005-11-17

arxiv.org/abs/cond-mat/0511435v1

Physics

Condensed Matter

Materials Science

12 pages, 3 figures

Scientific paper

Considerable efforts have been devoted recently to synthesize diluted magnetic semiconductors having ferromagnetic properties at room temperature because of their technological impacts for spintronic devices. In 2001 successful growth of GaMnN films showing room temperature ferromagnetism and p-type conductivity has been reported. The estimated Curie temperature was 940K at 5.7% of Mn, which is highest among diluted magnetic semiconductors ever been reported. However, the electronic mechanism behind the ferromagnetic behaviour has still been controversial. Here we show experimental evidence using the ferromagnetic samples that Mn atoms are substitutionally dissolved into the GaN lattice and they exhibit mixed valences of +2 (majority) and +3 (minority). The p-type carrier density decreases significantly at very low temperatures. At the same time, magnetization dramatically decreases. The results imply that the ferromagnetic coupling between Mn atoms is mediated by holes in the mid-gap Mn band.

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