Intrinsic Limits of Subthreshold Slope in Biased Bilayer Graphene Transistor

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

10 pages, 2 figures

Scientific paper

In this work, we investigate the intrinsic limits of subthreshold slope in a dual gated bilayer graphene transistor using a coupled self-consistent Poisson-bandstructure solver. We benchmark the solver by matching the bias dependent bandgap results obtained from the solver against published experimental data. We show that the intrinsic bias dependence of the electronic structure and the self-consistent electrostatics limit the subthreshold slope obtained in such a transistor well above the Boltzmann limit of 60mV/decade at room temperature, but much below the results experimentally shown till date, indicating room for technological improvement of bilayer graphene.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Intrinsic Limits of Subthreshold Slope in Biased Bilayer Graphene Transistor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Intrinsic Limits of Subthreshold Slope in Biased Bilayer Graphene Transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Intrinsic Limits of Subthreshold Slope in Biased Bilayer Graphene Transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-275496

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.