Intrinsic Domain Wall Resistance in Ferromagnetic Semiconductors

Details Intrinsic Domain Wall Resistance in Ferromagnetic Semiconductors Intrinsic Domain Wall Resistance in Ferromagnetic Semiconductors

2006-01-19

arxiv.org/abs/cond-mat/0601436v2

Phys. Rev. Lett. 97, 136603 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Final version

Scientific paper

10.1103/PhysRevLett.97.136603

Transport through zincblende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the spin-orbit interaction. The intrinsic resistance is independent of the domain wall shape and width when the latter is larger than the Fermi wavelength. For typical parameters, the intrinsic domain wall resistance is comparable to the Sharvin resistance and should be experimentally measurable.

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