Intrinsic Defects and Electronic Conductivity of TaON: First-Principles Insights

Details Intrinsic Defects and Electronic Conductivity of TaON: First-Principles Insights Intrinsic Defects and Electronic Conductivity of TaON: First-Principles Insights

2011-10-25

arxiv.org/abs/1110.5603v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.3664346

As a compound in between the tantalum oxide and nitride, the tantalum oxynitride TaON is expected to combine their advantages and act as an efficient visible-light-driven photocatalyst. In this letter, using hybrid functional calculations we show that TaON has different defect properties from the binary tantalum oxide and nitride: (i) instead of O or N vacancies or Ta interstitials, the $O_N$ antisite is the dominant defect, which determines its intrinsic n-type conductivity and the p-type doping difficulty; (ii) the $O_N$ antisite has a shallower donor level than O or N vacancies, with a delocalized distribution composed mainly of the Ta $5d$ orbitals, which gives rise to better electronic conductivity in the oxynitride than in the oxide and nitride. The phase stability analysis reveals that the easy oxidation of TaON is inevitable under O rich conditions, and a relatively O poor condition is required to synthesize stoichiometric TaON samples.

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