Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes

Details Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes

2005-05-04

arxiv.org/abs/cond-mat/0505101v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 3 figures, submitted to Phys. Rev. B; typo removed in revised version - spurious eq.12 immediately after eq.11

Scientific paper

10.1103/PhysRevB.73.033310

We predict bistability in the Curie temperature-voltage characteristic of
double barrier resonant-tunneling structures with dilute ferromagnetic
semiconductor quantum wells. Our conclusions are based on simulations of
electrostatics and ballistic quantum transport combined with a mean-field
theory description of ferromagnetism in dilute magnetic semiconductors.

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