Intervalley-Scattering Induced Electron-Phonon Energy Relaxation in Many-Valley Semiconductors at Low Temperatures

Details Intervalley-Scattering Induced Electron-Phonon Energy Relaxation in Many-Valley Semiconductors at Low Temperatures Intervalley-Scattering Induced Electron-Phonon Energy Relaxation in Many-Valley Semiconductors at Low Temperatures

2005-06-02

arxiv.org/abs/cond-mat/0506045v2

Phys. Rev. Lett. 95, 206602 (2005)

Physics

Condensed Matter

Disordered Systems and Neural Networks

v2: Notations changed: $\Delta_i$ --> $\delta v_i$, $\tau_{eff}$ removed. Eq. (1) changed, Eq. (2) added and complete derivati

Scientific paper

We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on heavily doped n-type Si samples with electron concentration in the range $3.5-16.0\times 10^{25}$ m$^{-3}$ are performed at sub-1 K temperatures. We find a good agreement between the theory and the experiment.

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