Interrupted chain assisted Al atomic wires on Si(211)

Details Interrupted chain assisted Al atomic wires on Si(211) Interrupted chain assisted Al atomic wires on Si(211)

2005-09-06

arxiv.org/abs/cond-mat/0509162v1

Physics

Condensed Matter

Materials Science

9 apges, 11 figures

Scientific paper

Possibility for the formation of stable Al atomic wire on the Si(211) surface is investigated using density functional theory based total energy calculations. The stable adsorption sites and the surface structures at various sub-monolayer coverages of Al are presented. It is found that the most stable and natural surface structures around one monolayer coverage is either $1\times5$ or $1\times6$ which agrees with experimental observations. More significantly, our study revealed that unlike the case of Ga the formation of continuous atomic Al chains assisted by interrupted Al chains may be possible by controlling the experimental conditions (pressure and temperature) such that the $\mu_{\rm Al}$ remains within $\sim 0.3$ eV from the bulk value. While the Al covered Si(211) surface may be metallic or semiconducting, the Ga covered Si(211) is always semiconducting in nature below 1 ML coverage. Also significant is the fact that Al atoms move from groove sites to the sites between terrace and trench atoms through lower energy channels as the coverage goes from 1/8 monolayer to 1/4 monolayer.

Affiliated with

Also associated with

No associations

Rating

Interrupted chain assisted Al atomic wires on Si(211) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Interrupted chain assisted Al atomic wires on Si(211), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interrupted chain assisted Al atomic wires on Si(211) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-216642