Physics – Condensed Matter – Materials Science
Scientific paper
2006-10-17
Phys. Rev B 74, 155322 (2006)
Physics
Condensed Matter
Materials Science
Scientific paper
10.1103/PhysRevB.74.155322
We present an eight-band k.p model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InGaN) QDs formed by composition fluctuations in InGaN layers. The eight-band k.p model accounts for strain effects, piezoelectric and pyroelectricity, spin-orbit and crystal field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of InGaN QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.
Bimberg Dieter
Schliwa Andrei
Winkelnkemper Momme
No associations
LandOfFree
Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-390214