Interplay of order-disorder phenomena and diffusion in rigid binary alloys: Monte Carlo simulations of the two-dimensional ABV model

Details Interplay of order-disorder phenomena and diffusion in rigid binary alloys: Monte Carlo simulations of the two-dimensional ABV model Interplay of order-disorder phenomena and diffusion in rigid binary alloys: Monte Carlo simulations of the two-dimensional ABV model

2006-05-09

arxiv.org/abs/cond-mat/0605241v1

Physics

Condensed Matter

Statistical Mechanics

41 pages, 18 figures

Scientific paper

Transport phenomena are studied for a binary (AB) alloy on a rigid square lattice with nearest-neighbor attraction between unlike particles, assuming a small concentration $c_v$ of vacancies $V$ being present, to which $A(B)$ particles can jump with rates $\Gamma_A (\Gamma_B)$ in the case where the nearest neighbor attractive energy $\epsilon_{AB}$ is negligible in comparison with the thermal energy $k_BT$ in the system. This model exhibits a continuous order-disorder transition for concentrations $c_A,c_B=1-c_A-c_V$ in the range $c_{A,1}^{crit}\leq c_A \leq c_{A,2}^{crit}$, with $c_{A,1}^{crit}=(1-m^*-c_V)/2$, $c_{A,2}^{crit} =(1+m^*-c_V)/2$, $m* \approx 0.25$, the maximum critical temperature occurring for $c*=c_A=c_B=(1-c_V)/2$, i.e. $m^*=0$. This phase transition belongs to the $d=2$ Ising universality class, demonstrated by a finite size scaling analysis. From a study of mean-square displacements of tagged particles, self-diffusion coefficients are deduced, while applying chemical potential gradients allow the estimation of Onsager coefficients. Analyzing finally the decay with time of sinusoidal concentration variations that were prepared as initial condition, also the interdiffusion coefficient is obtained as function of concentration and temperature. As in the random alloy case (i.e., a noninteracting ABV-model) no simple relation between self-diffusion and interdiffusion is found. Unlike this model mean field theory cannot describe interdiffusion, however, even if the necessary Onsager coefficients are estimated via simulation.

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