Interplay of bulk and edge states in transport of two-dimensional topological insulators

Details Interplay of bulk and edge states in transport of two-dimensional topological insulators Interplay of bulk and edge states in transport of two-dimensional topological insulators

2011-12-22

arxiv.org/abs/1112.5414v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 8 figures

Scientific paper

We study transport in two-terminal metal/quantum spin-Hall insulator (QSHI)/metal junctions. We show that the conductance signals originating from the bulk and the edge contributions are not additive. While for a long junction the transport is determined by the edge states contribution, for a short junction, the conductance signal is built from both bulk and edge states in the ratio which depends on the width of the sample. Further, in the topological insulator regime the conductance for short junctions shows a non-monotonic behavior as a function of the sample length. Surprisingly this non-monotonic behavior of conductance can be traced to the formation of an effectively propagating solution which is robust against scalar disorder. Our predictions should be experimentally verifiable in HgTe QWs and Bi$_2$Se$_3$ thin films.

Affiliated with

Also associated with

No associations

Rating

Interplay of bulk and edge states in transport of two-dimensional topological insulators does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Interplay of bulk and edge states in transport of two-dimensional topological insulators, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interplay of bulk and edge states in transport of two-dimensional topological insulators will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-308242