Physics – Condensed Matter – Other Condensed Matter
Scientific paper
2010-11-05
Phys. Rev. B 83, 125306 (2011)
Physics
Condensed Matter
Other Condensed Matter
9 pages, 9 figures
Scientific paper
10.1103/PhysRevB.83.125306
We present evidence that electrical transport studies of epitaxial p-type GeMn thin films fabricated on high resistivity Ge substrates are severely influenced by parallel conduction through the substrate, related to the large intrinsic conductivity of Ge due to its small bandgap. Anomalous Hall measurements and large magneto resistance effects are completely understood by taking a dominating substrate contribution as well as the measurement geometry into account. It is shown that substrate conduction persists also for well conducting, degenerate, p-type thin films, giving rise to an effective two-layer conduction scheme. Using n-type Ge substrates, parallel conduction through the substrate can be reduced for the p-type epi-layers, as a consequence of the emerging pn-interface junction. GeMn thin films fabricated on these substrates exhibit a negligible magneto resistance effect. Our study underlines the importance of a thorough characterization and understanding of possible substrate contributions for electrical transport studies of GeMn thin films.
Abstreiter Gerhard
Ahlers S.
Bougeard Dominique
Majer C.
Sircar Nilanjan
No associations
LandOfFree
Interplay between the electrical transport properties of GeMn thin films and Ge substrates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Interplay between the electrical transport properties of GeMn thin films and Ge substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interplay between the electrical transport properties of GeMn thin films and Ge substrates will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-455146