Internal Friction of Amorphous Silicon in a Magnetic Field

Details Internal Friction of Amorphous Silicon in a Magnetic Field Internal Friction of Amorphous Silicon in a Magnetic Field

1999-11-08

arxiv.org/abs/cond-mat/9911102v1

Physics

Condensed Matter

4 pages, 4 figures, REVTeX

Scientific paper

10.1103/PhysRevB.61.9902

The internal friction of e-beam amorphous silicon was measured in a magnetic
field between 0 and 6 T, from 1.5-20 K, and was found to be independent of the
field to better than 8%. It is concluded that the low energy excitations
observed in this experiment are predominantly atomic in nature.

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