Interminiband Rabi oscillations in biased semiconductor superlattices

Details Interminiband Rabi oscillations in biased semiconductor superlattices Interminiband Rabi oscillations in biased semiconductor superlattices

2007-02-08

arxiv.org/abs/cond-mat/0702227v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages, 16 figures

Scientific paper

10.1103/PhysRevB.75.165421

Carrier dynamics at energy level anticrossings in biased semiconductor superlattices, was studied in the time domain by solving the time-dependent Schroedinger equation. The resonant nature of interminiband Rabi oscillations has been explicitly demonstrated to arise from interference of intrawell and Bloch oscillations. We also report a simulation of direct Rabi oscillations across three minibands, in the high field regime, due to interaction between three strongly coupled minibands.

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