Interferometric detection of spin-polarized transport in the depletion layer of a metal-GaAs Schottky barrier

Details Interferometric detection of spin-polarized transport in the depletion layer of a metal-GaAs Schottky barrier Interferometric detection of spin-polarized transport in the depletion layer of a metal-GaAs Schottky barrier

2006-03-23

arxiv.org/abs/cond-mat/0603630v1

Physical Review Letters 96, 177401 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.96.177401

It is shown that the Kerr rotation of spin-polarized electrons is modulated by the distance of the electrons from the sample surface. Time-resolved Kerr rotation of optically-excited spin-polarized electrons in the depletion layer of n-doped GaAs displays fast oscillations that originate from an interference between the light reflected from the semiconductor surface and from the front of the electron distribution moving into the semiconductor. Using this effect, the dynamics of the photogenerated charge carriers in the depletion layer of the biased Schottky barrier is measured.

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