Interface States in Stressed Semiconductor Heterojunction with Antiferromagnetic Ordering

Details Interface States in Stressed Semiconductor Heterojunction with Antiferromagnetic Ordering Interface States in Stressed Semiconductor Heterojunction with Antiferromagnetic Ordering

1995-10-27

arxiv.org/abs/cond-mat/9510157v1

Physics

Condensed Matter

12 pages, Latex, uuencoded file with 2 Postscript figues included

Scientific paper

The stressed heterojunctions with antiferromagnetic ordering in which the constituents have oppposite band edge symmetry and their gaps have opposite signs have been investigated. The interface states have been shown to appear in these heterojunctions and they are spin-split. As a result if the Fermi level gets into one of the interface bands then it leads to magnetic ordering in the interface plane. That is the interface magnetization effect can be observed.

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