Interface states in junctions of two semiconductors with intersecting dispersion curves

Details Interface states in junctions of two semiconductors with intersecting dispersion curves Interface states in junctions of two semiconductors with intersecting dispersion curves

1998-06-10

arxiv.org/abs/cond-mat/9806135v3

Europhys. Lett., 43 (3), pp. 331-336 (1998)

Physics

Condensed Matter

1 figure

Scientific paper

10.1209/epl/i1998-00361-2

A novel type of shallow interface state in junctions of two semiconductors without band inversion is identified within the envelope function approximation, using the two-band model. It occurs in abrupt junctions when the interband velocity matrix elements of the two semiconductors differ and the bulk dispersion curves intersect. The in-plane dispersion of the interface state is found to be confined to a finite range of momenta centered around the point of intersection. These states turn out to exist also in graded junctions, with essentially the same properties as in the abrupt case.

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