Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy

Details Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy

2009-06-18

arxiv.org/abs/0906.3519v1

Appl. Phys. Lett. 95, 023115 (2009)

Physics

Condensed Matter

Strongly Correlated Electrons

11 pages, 4 figures

Scientific paper

10.1063/1.3177328

We present an x-ray absorption study of the dependence of the V oxidation state on the thickness of LaVO$_3$ (LVO) and capping LaAlO$_3$ (LAO) layers in the multilayer structure of LVO sandwiched between LAO. We found that the change of the valence of V as a function of LAO layer thickness can be qualitatively explained by a transition between electronically reconstructed interfaces and a chemical reconstruction. The change as a function of LVO layer thickness is complicated by the presence of a considerable amount of V$^{4+}$ in the bulk of the thicker LVO layers.

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