Interface-mediated pairing in field effect devices

Details Interface-mediated pairing in field effect devices Interface-mediated pairing in field effect devices

2004-02-25

arxiv.org/abs/cond-mat/0402624v3

Phys. Rev. B 71, 104510 (2005)

Physics

Condensed Matter

Strongly Correlated Electrons

11 pages, 11 figures, text and figures updated to published version

Scientific paper

10.1103/PhysRevB.71.104510

We consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the critical temperature $T_c$ as a function of applied voltage and for different materials properties. Assuming that a sufficient carrier density can be induced in a field-gated device, we argue that superconductivity may be observable in such systems. $T_c$ is found to be a nonmonotonic function of both electric field and the excitation energy of the two-level systems.

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