Interface hole-doping in cuprate-titanate superlattices

Details Interface hole-doping in cuprate-titanate superlattices Interface hole-doping in cuprate-titanate superlattices

2006-05-24

arxiv.org/abs/cond-mat/0605589v2

Physical Review B (Rapid Communications) 75, 140512(R) (2007)

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 5 figures

Scientific paper

10.1103/PhysRevB.75.140512

The electronic structure of interfaces between YBa$_2$Cu$_3$O$_6$ and SrTiO$_3$ is studied using local spin density approximation (LSDA) with intra-atomic Coulomb repulsion (LSDA+U). We find a metallic state in cuprate/titanate heterostructures with the hole carriers concentrated substantially in the CuO$_2$-layers and in the first interface TiO$_2$ and SrO planes. This effective interface doping appears due to the polarity of interfaces, caused by the first incomplete copper oxide unit cell. Interface-induced high pre-doping of CuO$_2$-layers is a key mechanism controlling the superconducting properties in engineered field-effect devices realized on the basis of cuprate/titanate superlattices.

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