Interface-driven phase separation in multifunctional materials: the case of GeMn ferromagnetic semiconductor

Details Interface-driven phase separation in multifunctional materials: the case of GeMn ferromagnetic semiconductor Interface-driven phase separation in multifunctional materials: the case of GeMn ferromagnetic semiconductor

2012-03-12

arxiv.org/abs/1203.2417v2

Physical Review B 85, 11 (2012) 115204

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.85.115204

We use extensive first principle simulations to show the major role played by interfaces in the mechanism of phase separation observed in semiconductor multifunctional materials. We make an analogy with the precipitation sequence observed in over-saturated AlCu alloys, and replace the Guinier-Preston zones in this new context. A new class of materials, the $\alpha$ phases, is proposed to understand the formation of the coherent precipitates observed in the GeMn system. The interplay between formation and interface energies is analyzed for these phases and for the structures usually considered in the literature. The existence of the alpha phases is assessed with both theoretical and experimental arguments.

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