Interband Light Absorption at a Rough Interface

Details Interband Light Absorption at a Rough Interface Interband Light Absorption at a Rough Interface

1999-09-30

arxiv.org/abs/cond-mat/9909444v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

LATEX, 19 pages, 4 PostScript figures

Scientific paper

10.1016/S1386-9477(99)00256-8

Light absorption at the boundary of indirect-band-gap and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of absorption in porous and microcrystalline semiconductors. The effect is more pronounced at a rough boundary due to enlargement of the share of the interface atoms.

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