Interaction Corrections to Two-Dimensional Hole Transport in Large $r_{s}$ Limit

Details Interaction Corrections to Two-Dimensional Hole Transport in Large $r_{s}$ Limit Interaction Corrections to Two-Dimensional Hole Transport in Large $r_{s}$ Limit

2002-06-26

arxiv.org/abs/cond-mat/0206519v2

Phys. Rev. B 68, 165308 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 4 figures

Scientific paper

10.1103/PhysRevB.68.165308

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter $F_{0}^{\sigma}$ determined from the experiment, however, decreases with increasing $r_{s}$ for $r_{s}\agt22$, a behavior unexpected from existing theoretical calculations valid for small $r_{s}$.

Affiliated with

Also associated with

No associations

Rating

Interaction Corrections to Two-Dimensional Hole Transport in Large $r_{s}$ Limit does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Interaction Corrections to Two-Dimensional Hole Transport in Large $r_{s}$ Limit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interaction Corrections to Two-Dimensional Hole Transport in Large $r_{s}$ Limit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-195114