Inter-Layer Screening Length to Electric Field in Thin Graphite Film

Details Inter-Layer Screening Length to Electric Field in Thin Graphite Film Inter-Layer Screening Length to Electric Field in Thin Graphite Film

2008-03-06

arxiv.org/abs/0803.0816v1

Applied Physics Express 1 (2008) 034007

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures. To be published in Applied Physics Express

Scientific paper

10.1143/APEX.1.034007

Electric conduction in thin graphite film was tuned by two gate electrodes to clarify how the gate electric field induces electric carriers in thin graphite. The graphite was sandwiched between two gate electrodes arranged in a top and bottom gate configuration. A scan of the top gate voltage generates a resistance peak in ambiploar response. The ambipolar peak is shifted by the bottom gate voltage, where the shift rate depends on the graphite thickness. The thickness-dependent peak shift was clarified in terms of the inter-layer screening length to the electric field in the double-gated graphite film. The screening length of 1.2 nm was experimentally obtained.

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