Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy

Details Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy

2005-02-21

arxiv.org/abs/cond-mat/0502501v1

Appl. Phys. Lett. 86, 112106 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, to appear in Applied Physics Letters

Scientific paper

10.1063/1.1883301

We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition directly on a metal surface. The high temperature ~800 C involved in the growth process poses challenging issues such as surface roughness and integrity of the structure which are addressed in this work. We demonstrate the effectiveness of the gate on the freestanding part of the nanotubes by performing tunneling spectroscopy that reveals Coulomb blockade diamonds. Our approach enables combined scanning tunneling microscopy and gated electron transport investigations of carbon nanotubes.

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