Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

Details Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

2007-02-13

arxiv.org/abs/cond-mat/0702292v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures, to appear in Physical Review Letters

Scientific paper

10.1103/PhysRevLett.99.016801

We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors, is difficult to reconcile with non-interacting electron theory.

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