Insulator-to-metal transition in sulfur-doped silicon

Details Insulator-to-metal transition in sulfur-doped silicon Insulator-to-metal transition in sulfur-doped silicon

2011-03-03

arxiv.org/abs/1103.0609v1

Physics

Condensed Matter

Materials Science

Submission formatting; 4 journal pages equivalent

Scientific paper

We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to a dopant known to produce only deep levels at equilibrium concentrations. Temperature-dependent conductivity and Hall effect measurements for temperatures T > 1.7 K both indicate that a transition from insulating to metallic conduction occurs at a sulfur concentration between 1.8 and 4.3 x 10^20 cm-3. Conduction in insulating samples is consistent with variable range hopping with a Coulomb gap. The capacity for deep states to effect metallic conduction by delocalization is the only known route to bulk intermediate band photovoltaics in silicon.

Affiliated with

Also associated with

No associations

Rating

Insulator-to-metal transition in sulfur-doped silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Insulator-to-metal transition in sulfur-doped silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulator-to-metal transition in sulfur-doped silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-588728