Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well

Details Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well

2009-03-03

arxiv.org/abs/0903.0486v2

Phys. Rev. B 79, 241302(R) (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.

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