Insulating behavior in ultra-thin bismuth selenide field effect transistors

Details Insulating behavior in ultra-thin bismuth selenide field effect transistors Insulating behavior in ultra-thin bismuth selenide field effect transistors

2012-01-18

arxiv.org/abs/1201.3908v1

Nano Lett., 2011, 11 (5), pp 1925--1927

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1021/nl200017f

Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that ultrathin Bi2Se3 FETs are n-type, and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.

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