Physics – Condensed Matter – Materials Science
Scientific paper
2006-02-07
Physics
Condensed Matter
Materials Science
19 pages, 7 figures
Scientific paper
10.1103/PhysRevB.74.035302
We investigate the initial stage of the 2D-3D transition of strained Ge layers deposited on pit-patterned Si(001) templates. Within the pits, which assume the shape of inverted, truncated pyramids after optimized growth of a Si buffer layer, the Ge wetting layer develops a complex morphology consisting exclusively of {105} and (001) facets. These results are attributed to a strain-driven step-meandering instability on the facetted side-walls of the pits, and a step-bunching instability at the sharp concave intersections of these facets. Although both instabilities are strain-driven, their coexistence becomes mainly possible by the geometrical restrictions in the pits. It is shown that the morphological transformation of the pit surface into low-energy facets has strong influence on the preferential nucleation of Ge islands at the flat bottom of the pits.
Bauer Guenther
Chen Gang
Jantsch Wolfgang
Lichtenberger Herbert
Schaffler Friedrich
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