Inhibited Al diffusion and growth roughening on Ga-coated Al (100)

Details Inhibited Al diffusion and growth roughening on Ga-coated Al (100) Inhibited Al diffusion and growth roughening on Ga-coated Al (100)

1996-07-04

arxiv.org/abs/mtrl-th/9607002v1

Phys.Rev.Lett.77,695(1996)

Physics

Condensed Matter

Materials Science

4 pages RevTeX-twocolumn, no figures. to appear in Phys. Rev. Lett., July 1996

Scientific paper

10.1103/PhysRevLett.77.695

Ab initio calculations indicate that the ground state for Ga adsorption on Al (100) is on-surface with local unit coverage. On Ga-coated Al (100), the bridge diffusion barrier for Al is large, but the Al$\rightarrow$Ga {\it exchange barrier is zero}: the ensuing incorporation of randomly deposited Al's into the Ga overlayer realizes a percolation network, efficiently recoated by Ga atoms. Based on calculated energetics, we predict rough surface growth at all temperatures; modeling the growth by a random deposition model with partial relaxation, we find a power-law divergent roughness $w\sim t^{\,0.07\pm0.02}$.

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