Infrared spectroscopy of electronic bands in bilayer graphene

Details Infrared spectroscopy of electronic bands in bilayer graphene Infrared spectroscopy of electronic bands in bilayer graphene

2008-10-14

arxiv.org/abs/0810.2400v2

Phys. Rev. B 79, 115441 (2009)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.79.115441

We present infrared spectra (0.1-1 eV) of electrostatically gated bilayer graphene as a function of doping and compare it with tight binding calculations. All major spectral features corresponding to the expected interband transitions are identified in the spectra: a strong peak due to transitions between parallel split-off bands and two onset-like features due to transitions between valence and conduction bands. A strong gate voltage dependence of these structures and a significant electron-hole asymmetry is observed that we use to extract several band parameters. Surprisingly, the structures related to the gate-induced bandgap are much less pronounced in the experiment than predicted by the tight binding model.

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