Influence of well width fluctuations on the binding energy of excitons, charged excitons and biexcitons in GaAs-based quantum wells

Details Influence of well width fluctuations on the binding energy of excitons, charged excitons and biexcitons in GaAs-based quantum wells Influence of well width fluctuations on the binding energy of excitons, charged excitons and biexcitons in GaAs-based quantum wells

2004-01-23

arxiv.org/abs/cond-mat/0401466v2

Phys. Rev. B 70, 035323 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

32 pages, 13 figures

Scientific paper

10.1103/PhysRevB.70.035323

We present a first-principle path integral Monte-Carlo (PIMC) study of the binding energy of excitons, trions (positively and negatively charged excitons) and biexcitons bound to single-island interface defects in quasi-two-dimensional GaAs/Al$_{x}$Ga$_{1-x}$As quantum wells. We discuss in detail the dependence of the binding energy on the size of the well width fluctuations and on the quantum-well width. The numerical results for the well width dependence of the exciton, trions and biexciton binding energy are in good quantitative agreement with the available experimental data.

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