Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

Details Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

2004-08-24

arxiv.org/abs/cond-mat/0408514v1

Physics

Condensed Matter

Other Condensed Matter

submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.1852089

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than $10^{-9} \ \mathrm{A/cm}^2$. Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications.

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