Influence of the electric field on edge dislocations in smectics

Details Influence of the electric field on edge dislocations in smectics Influence of the electric field on edge dislocations in smectics

1995-05-09

arxiv.org/abs/cond-mat/9505039v1

Physics

Condensed Matter

Tex, 13 pages, submitted to J. de Physique II. (permanent e-mail address: holyst@alfa.ichf.edu.pl)

Scientific paper

10.1051/jp2:1995197

The electric field applied perpendicularly to smectic layers breaks the rotational symmetry of the system. Consequently, the elastic energy associated with distortions induced by an edge dislocation diverges logarithmically with the size of the system. In freely suspended smectic films the dislocations in the absence of the electric field are located exactly in the middle of the film. The electric field above a certain critical value can shift them towards the surface. This critical field squared is a linear function of the surface tension and is inversly proportional to the thickness of the film. The equilibrium location of a dislocation in the smectic film subjected to the field is also calculated.

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