Influence of structural disorder on low-temperature behavior of penetration depth in electron-doped high-T_C thin films

Details Influence of structural disorder on low-temperature behavior of penetration depth in electron-doped high-T_C thin films Influence of structural disorder on low-temperature behavior of penetration depth in electron-doped high-T_C thin films

2007-01-18

arxiv.org/abs/cond-mat/0701457v1

Physica C 450, 40 (2006)

Physics

Condensed Matter

Superconductivity

Scientific paper

10.1016/j.physc.2006.08.008

To probe the influence of structural disorder on low-temperature behavior of magnetic penetration depth in electron-doped high-T_C superconductors, a comparative study of high-quality Pr_{1.85}Ce_{0.15}CuO_4 (PCCO) and Sm_{1.85}Ce_{0.15}CuO_4 (SCCO) thin films is presented. The obtained results confirm a d-wave pairing mechanism in both samples, substantially modified by impurity scattering (which is more noticeable in less homogeneous SCCO films) at the lowest temperatures. The value of the extracted impurity scattering rate correlates with the quality of our samples and is found to be much higher in less homogeneous films with lower T_C.

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