Influence of step-edge barriers on the morphological relaxation of nanoscale ripples on crystal surfaces

Details Influence of step-edge barriers on the morphological relaxation of nanoscale ripples on crystal surfaces Influence of step-edge barriers on the morphological relaxation of nanoscale ripples on crystal surfaces

2004-04-29

arxiv.org/abs/cond-mat/0404693v1

Physics

Condensed Matter

Materials Science

To appear in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.92.256101

We show that the decay of sinusoidal ripples on crystal surfaces, where mass transport is limited by the attachment and detachment of atoms at the step-edges, is remarkably different from the decay behavior that has been reported until now. Unlike the decreasing or at most constant rate of amplitude decay of sinusoidal profiles observed in earlier work, we find that the decay rate increases with decreasing amplitude in this kinetic regime. The rate of shape invariant amplitude relaxation is shown to be inversely proportional to both the square of the wavelength and the current amplitude. We have also carried out numerical simulations of the relaxation of realistic sputter ripples.

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