Influence of quantum confinement on the ferromagnetism of (Ga,Mn)As diluted magnetic semiconductor

Details Influence of quantum confinement on the ferromagnetism of (Ga,Mn)As diluted magnetic semiconductor Influence of quantum confinement on the ferromagnetism of (Ga,Mn)As diluted magnetic semiconductor

2001-11-24

arxiv.org/abs/cond-mat/0111475v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

We investigate the effect of quantum confinement on the ferromagnetism of diluted magnetic semiconductor Ga$_{1-x}$Mn$_x$As using a combination of tight-binding and density functional methods. We observe strong majority-spin Mn $d$-As $p$ hybridization, as well as half metallic behavior, down to sizes as small as 20 \AA in diameter. Below this critical size, the doped holes are self-trapped by the Mn-sites, signalling both valence and electronic transitions. Our results imply that magnetically doped III-V nanoparticles will provide a medium for manipulating the electronic structure of dilute magnetic semiconductors while conserving the ferromagnetic properties and even enhancing it in certain size regime.

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