Influence of oxygen vacancy on the electronic structure of HfO$_2$ film

Details Influence of oxygen vacancy on the electronic structure of HfO$_2$ film Influence of oxygen vacancy on the electronic structure of HfO$_2$ film

2007-07-14

arxiv.org/abs/0707.2127v1

Physics

Condensed Matter

Materials Science

5 pages, 4 figures, submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.76.165411

We investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxide (HfO$_{\sim1.8}$) using soft x-ray absorption spectroscopy at O $K$ and Hf $N_3$ edges. Band-tail states beneath the unoccupied Hf 5$d$ band are observed in the O $K$-edge spectra; combined with ultraviolet photoemission spectrum, this indicates the non-negligible occupation of Hf 5$d$ state. However, Hf $N_3$-edge magnetic circular dichroism spectrum reveals the absence of a long-range ferromagnetic spin order in the oxide. Thus the small amount of $d$ electron gained by the vacancy formation does not show inter-site correlation, contrary to a recent report [M. Venkatesan {\it et al.}, Nature {\bf 430}, 630 (2004)].

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